Measurement of the non-radiative minority recombination lifetime and the effective radiative recombination coefficient in GaAs

effect of the extrinsic and temporal carriers on radiative recombination of iii-nitride nanostructures

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires

III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon technology. Alloying of GaAs with nitrogen can further enhance performance and extend device function...

Investigation of the Effect of Recombination on Superluminescent Light-Emitting Diode Output Power Based on Nitride Pyramid Quantum Dots

In this article, the temperature behavior of output power of superluminescent light-emitting diode (SLED) by considering the effect of non-radiative recombination coefficient, non-radiative spontaneous emission coefficient and Auger recombination coefficients has been investigated. For this aim, GaN pyramidal quantum dots were used as the active region. The numerical method has been used to sol...

Radiative transfer effects in hydrogen recombination masers

Using a simple on-the-spot approximation, we explore the parameter range in the (log(R), log(ne)) plane for which maser action in atomic hydrogen is present and briefly discuss how the borderlines of this region of strong population inversion arise. In particular we address the influence of radiative transfer on the population structure. We find that in normal HII regions no strong maser activi...

Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires